ec 73 4 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 1 o f 6 4 g 22 n - rev.f001 features 600v, 4a, r ds(on) (max.) = 2.4 @ v gs = 10v low crss fa s t switching 100 % avalanche tested applications ? charger ? standby power. absolute maximum ratings ( tc = 25 symbol parameter limit unit to - 220f to - 251 to - 252 v ds drain C source voltage a 600 v v gs gate - source voltage 30 v i d drain current - continuous, t c =25 4 a drain current - continuous, t c =100 2.5 a i dm drain current - pulsed b 16 a p d maximum power dissipation @ t j =25 3 3 77 w e as single pulsed avalanche energy e 217 mj t j , t stg operating and store temperature range - 55 to 150 thermal characteristics symbol parameter value unit r j c thermal resistance, junction - case max. 3.58 1.61 /w r j a thermal resistance, junction - ambient max. 120 110 /w
ec 73 4 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 2 o f 6 4 g 22 n - rev.f001 symbol parameter test condition min. typ. max. unit bv dss drain - source breakdown voltage v gs = 0v, i d = 250 a 600 - - v i dss zero gate voltage drain current v ds = 600v, v gs = 0v - - 1 a i gssf forward gate body leakage current v ds = 0v, v gs = 30v - - 100 na i gssr rev erse gate body leakage current v ds = 0v, v gs = - 30v - - - 100 na v gs (th) gate threshold voltage v ds = v gs , i d = 250a 2 2.62 4 v r ds (on) static drain - source on - resistance d v gs = 10v, i d = 2 a - 1.91 2.4 g fs forward transconductance d v ds = 15v, i d = 2 a - 2.3 10 s ciss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz - 464 - pf coss output capacitance - 87 - pf crss reverse transfer capacitance - 16 - pf td(on) turn - on delay time v dd = 300v, i d = 4 a, r g = 10 , v gs = 10v - 2 1 .1 - ns tr turn - on rise time - 7.5 - ns td(off) turn - off delay time - 2 9.1 - ns tf turn - off fall time - 6.3 - ns qg total gate charge v ds = 300v, i d = 4 a, v gs = 10v - 8.4 - nc qgs gate - source charge - 3.2 - nc qgd gate - drain charge - 2.8 - nc electrical characteristics ( t j = 25c unless otherwise noted ) off characteristics on characteristics dynamic characteristics switching characteristics
ec 73 4 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 3 o f 6 4 g 22 n - rev.f001 i s drain - source diode forward cont inuous current v gs = 0v - - 4 a i sm maximum pulsed current v gs = 0v - - 16 a v sd drain - source diode forward voltage v gs = 0v, i s = 4 a - 0.81 1.4 v drai n - source diode characteristics notes : a. t j = +25 c to +150 c. b. repetitive rating; pulse width limited by maximum junction temperature. c. i sd = 4 .0a di/dt Q 100 a/s, v dd Q bv dss , t j Q +150 c. d. pulse width Q 300 s; duty cycle Q 2%. e. l=30mh, v d d =145v, i as =2.52a, r g =25 starting t j =25 . v ds , d rain - source voltage (v) for ec73 4 n60ar figure 1 - 1 maximum safe operating area v ds , drain - source voltage (v) for ec732n60a3r / ec73 4 n60a4r figure 1 - 2 maximum safe operating area figure 2. normalized on - resistance variation with temperature figure 3. gate threshold variation with temperature
ec 73 4 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 4 o f 6 4 g 22 n - rev.f001 figure 4. capacitance characteristics figure 6. on - state characteristics figure 7. body diode forward voltage variation with source current figure 8. transfer characteristics figure 5. gate charge characteristics
ec 73 4 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 5 o f 6 4 g 22 n - rev.f001 square pulse duration (sec) for ec73 4 n60ar figure 9 - 2 . normalized effective transient thermal impedance with pulse duration figure 9 - 3 . normalized effective transient thermal impedance with pulse duration square pulse duration (sec) for ec73 4 n60 a3r / ec73 4 n60 a4r figure 10 . maximum drain current vs. case temperature
ec 73 4 n60 n - channel power mosfet c o n v e r t e r e - c m o s c o r p . ( ww w . e c m o s . c o m . t w ) p a g e 6 o f 6 4 g 22 n - rev.f001 order ing information part number package marking marking information ec 73 4 n60ar to - 220f - 3l 73 4 n60 lllll yyww 1. lllll lot no. 2. yy year code 3. ww week code ec 73 4 n60a3r to - 251 - 3l ec 73 4 n60a 4 r to - 2 52 - 3l
|
